Black silicon carbide

Product Introduction      

       Black Silicon Carbide (SiC), also known as Carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. The Silicon Carbide crude is produced by combining silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1600 °C (2910 °F) and 2500 °C (4530 °F). The SiC microcosmic shape is a hexagonal crystal, mohs hardness is 9.3, micro hardness is 2940-3300kg/mm2, specific gravity is 3.20-3.25g/mm3, bulk density is 1.2-1.6g/mm3.

Main Application

       Solar wafer, semiconductor wafer and quartz chip wire sawing and lapping, bonded and coated abrasive tools: stone polishing; processing metal and non-ferrous metal with low tensile strength, such as: gray pig iron, brass, aluminum, stone, leather and rubber.

Grit Size	Chemical Composition % (by weight)
	SIC	F.C	Fe2O3
12#-90#	≥98.50	≤0.15	≤0.15
100#-220#	≥98.50	≤0.15	≤0.15
240#-600#	≥98.00	≤0.15	≤0.15
800#-1000#	≥98.00	≤0.20	≤0.20
1200#-1500#	≥97.50	≤0.20	≤0.20

Standard: FEPA – F (bonded abrasive application), FEPA - P (coated abrasive application), JIS Standard.
Grit Available: F12 – F220 (Macro), F240 – F1500 (Micro powder) P24 – P220 (Macro), P240 – P2500 (Micro powder) JIS 12# – 4000#
For refractory: 0-1mm, 1-3mm, 3-5mm, 0-10mm, -70F, -100F, -325F, C-Dust.

Other grain sizes on requests are available.